Effect of Growth Parameters on the Residual Stress and Dislocation Density of Czochralski‐Grown Silicon Crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659763
Reference4 articles.
1. Infrared Studies of Birefringence in Silicon
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1. Materials characterization and device analysis for evaluation of semiconductor processes by highly-sophisticated photoelastic stress measurement technique;physica status solidi (c);2015-05-11
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3. Electronic Packaging Applications;Springer Handbook of Experimental Solid Mechanics;2008
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