Quantitative shear stress imaging in high throughput in-line Si wafer inspection-Reference-Cited by-同舟云学术

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Quantitative shear stress imaging in high throughput in-line Si wafer inspection

Published:2024-08 Issue: Volume:178 Page:108449
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kovács Zsolt^ORCID,Boros Csanád Ö.,Kovács Teodóra N.,Kovács Zsolt,Kiss ZoltánT.

Publisher

Elsevier BV

Reference22 articles.

1. Demonstration of observation of dislocations in GaN by novel birefringence method;Tanaka;phys. stat. solidi (b),2019

2. Observation of in-plane shear stress fields in off-axis SiC wafers by birefringence imaging;Harada;J. Appl. Crystallogr.,2022

3. Birefringence images of screw dislocations viewed endon in cubic crystals;Ge;J. Appl. Phys.,1991

4. Birefringence microscopy of unit dislocations in diamond;Hoa;Cryst. Growth Des.,2014

5. Physical Properties of Crystals;Nye,1985

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