The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4722787
Reference10 articles.
1. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper
2. Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor
3. Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays
4. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display
5. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress
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1. Research status and development of insulation breakdown in engineering solid dielectrics;Chinese Science Bulletin;2020-03-24
2. Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors;Solid-State Electronics;2020-03
3. Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors;Journal of Physics D: Applied Physics;2020-01-21
4. Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses;Beilstein Journal of Nanotechnology;2018-09-26
5. Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination;Solid-State Electronics;2018-06
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