Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination-Reference-Cited by-同舟云学术

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

Published:2018-06 Issue: Volume:144 Page:95-100
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cho Yong-Jung,Kim Woo-Sic,Lee Yeol-Hyeong,Park Jeong Ki,Kim Geon Tae,Kim Ohyun

Funder

MSIP

IITP

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress

4. Effect of Rising Edge during Dynamic Stress With Duty Ratio in Amorphous InGaZnO Thin Film Transistors

5. Ambient effect on thermal stability of amorphous InGaZnO thin film transistors

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