Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In<sub>2</sub>O<sub>3</sub> Thin-film Transistors-Reference-Cited by-同舟云学术

Effect of Atmosphere Dependent Annealing on the Electrical Characteristics of a-In₂O₃ Thin-film Transistors

Published:2024-03 Issue:3 Volume:71 Page:1932-1939
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Jiayi¹^ORCID,Zhang Kuo²,Li Yuxuan²,You Nannan¹^ORCID,Xu Yang¹^ORCID,Li Ling³^ORCID,Wang Shengkai²

Affiliation:

1. High-Voltage Device and Integrated Circuits Research and Development Center, the Institute of Microelectronics of the Chinese Academy of Sciences, and the Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, China

2. High-Frequency High-Voltage Device and Integrated Circuits Reserach and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing, China

3. Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Outstanding Member Project of the Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10457976/10422750.pdf?arnumber=10422750

Reference41 articles.

1. Visible-blind UV detector based on water-gated thin film transistor with In2O3 channel grown by metal–organic chemical vapor deposition

2. A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization

3. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT