A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3549810
Reference17 articles.
1. Transparent thin-film transistors with zinc indium oxide channel layer
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5. High-mobility amorphous In2O3–10wt%ZnO thin film transistors
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