Polyimide-Doped Indium–Gallium–Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
2. LG Display Co., Ltd., 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
Funder
LG Display
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.2c01769
Reference60 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors
3. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing
4. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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