Affiliation:
1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Shaanxi Engineering Research Center of Advanced Energy Materials and Devices, School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an Shaanxi 710049 P. R. China
Abstract
AbstractPbS QDs/a‐IGZO based sensitized photo field‐effect transistors are promising candidate for next‐generation near‐infrared photodetectors due to their ultra‐high sensitivity, gate tunability, and ease of integration. However, the reported PbS QDs/a‐IGZO based devices are all dependent on the solid‐state ligand exchange, and are troubled by problems such as poor repeatability, poor air stability, and negative influence on the transfer characteristic curve. In this article, for the first time, optimized high‐quality PbI2 capped PbS QDs films prepared by the solution‐phase ligand exchange are applied to PbS QDs/a‐IGZO sensitized Photo‐FETs. The device not only gets rid of the tedious layer‐by‐layer deposition, but also exhibits a detectivity of 9.3 × 1012 Jones, a responsivity of 45.3 A W−1 and a decay time of 24.6 ms (@1064 nm, 1.89 mW cm−2). The operation mode of the sensitized device can meet different detection requirements by adjusting gate voltage. Importantly, the responsivity of the unencapsulated PbS‐I based device remained unchanged after six months air exposure, demonstrating excellent air stability.
Funder
Natural Science Foundation of Shaanxi Province
Fundamental Research Funds for the Central Universities
Subject
Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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