Affiliation:
1. Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Shaanxi Engineering Research Center of Advanced Energy Materials and Devices School of Electronic Science and Engineering Xi'an Jiaotong University Xi'an Shaanxi 710049 P. R. China
Abstract
AbstractPaper‐based photodetectors have emerged as reliable candidates for wearable electronics due to their low‐cost, degradability and excellent bending properties. However, the application of quantum dots (QDs) to paper‐based devices remains a challenge due to the low carrier mobility. In this work, lead sulfide (PbS) QDs are successfully applied to paper‐based devices by constructing the amorphous indium gallium zinc oxide (a‐IGZO)/PbS QDs‐EDT heterojunction to enhance the photoconductive gain of the QDs film. the effect of different paper substrates are investigated on device performance and demonstrate that the heterojunction is not suitable for the fiber‐like paper substrate. Heterojunction devices based on Senyan paper and glass paper exhibit stable detection performance with detectivity of 1.71 × 1010 and 3.19 × 1011 Jones, respectively. Benefit from the unique micro‐morphology, the Senyan paper‐based device exhibited excellent bending resistance and remained stable after 1000 bends.
Funder
Fundamental Research Funds for the Central Universities
Subject
Industrial and Manufacturing Engineering,Mechanics of Materials,General Materials Science