Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing-Reference-Cited by-同舟云学术

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Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing

Published:2021-06-28 Issue:27 Volume:13 Page:31816-31824
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Min Seong¹,Kim Hyung Tae¹,Yoo Hyukjoon¹,Choi Dong Hyun¹,Park Jeong Woo¹,Kim Tae Sang²,Lim Jun Hyung²,Kim Hyun Jae¹^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea

2. Process Research Team, Display Research Center, Samsung Display, 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do 17113, Republic of Korea

Funder

Samsung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c05565

Reference50 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors

3. Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment

4. Nitrocellulose-based collodion gate insulator for amorphous indium zinc gallium oxide thin-film transistors

5. Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

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4. Improvement of the electrical properties of amorphous indium-gallium-zinc oxide thin-film transistors by cross-linked CYTOP passivation;Applied Surface Science;2024-04

5. 35‐4: High‐Mobility and High‐Negative Bias Illumination Stress Stability Based on ITZO/IGZO Bilayer Thin Film Transistors;SID Symposium Digest of Technical Papers;2024-04

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