Solution-Processed Aluminum-Zirconium Oxide as a Gate Dielectric for InGaZnO Thin Film Transistors
Author:
Funder
Ministry of Trade, Industry and Energy
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/s42835-023-01696-5.pdf
Reference27 articles.
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2. Ji D, Jang JH, Kim D, Rim YS, Hwang DK, Noh Y-Y (2021) Recent progress in the development of backplane thin film transistors for information displays. J Inf Disp 22(1):1–11. https://doi.org/10.1080/15980316.2020.1818641
3. Fortunato E, Barquinha P, Martins R (2012) Oxide semiconductor thin-film transistors: a review of recent advances. Adv Mater 24(22):2945–2986. https://doi.org/10.1002/adma.201103228
4. Kim Y-H, Heo J-S, Kim T-H, Park S, Yoon M-H, Kim J, Oh MS, Yi G-R, Noh Y-Y, Park SK (2012) Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films. Nature 489:128–132. https://doi.org/10.1038/nature11434
5. Im H, Song H, Park J, Hong Y, Ha J, Ji S-B, Jeong J, Hong Y (2017) Accurate defect density-of-state extraction based on back-channel surface potential measurement for solution-processed metal-oxide thin-film transistors. IEEE Trans Electron Devices 64(4):1683–1688. https://doi.org/10.1109/TED.2017.2664661
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