Effects of High-Energy X-ray Irradiation on the Electrical and Chemical Properties of In–Ga–Sn–O Thin Films with Al<sub>2</sub>O<sub>3</sub> Passivation Layer for Thin-Film Transistor Applications-Reference-Cited by-同舟云学术

Effects of High-Energy X-ray Irradiation on the Electrical and Chemical Properties of In–Ga–Sn–O Thin Films with Al₂O₃ Passivation Layer for Thin-Film Transistor Applications

Published:2023-04-24 Issue:5 Volume:5 Page:2528-2537
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yatsu Kie¹^ORCID,Lee Hyun-Ah¹^ORCID,Park Ick-Joon²^ORCID,Kwon Hyuck-In¹^ORCID

Affiliation:

1. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea

2. Department of Electrical and Electronic Engineering, Joongbu University, Goyang 10279, Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00006

Reference51 articles.

1. Technical assessment of 2D and 3D imaging performance of an IGZO‐based flat‐panel X‐ray detector

2. Energy-resolved X-ray detectors: the future of diagnostic imaging

3. High-resolution X-ray computed tomography in geosciences: A review of the current technology and applications

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