The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764045
Reference29 articles.
1. Strained Silicon Devices
2. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
3. Strain Enhanced nMOS Using In Situ Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process
4. Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status
5. Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/ for high performance pFETs.
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1. Full characterization of ultrathin 5-nm low- k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties;Physical Review Materials;2020-07-13
2. Lattice contraction due to boron doping in silicon;Materials Science in Semiconductor Processing;2018-11
3. Material lattice orientation effect of local Si 1-x Ge x stressors on the width dependence of high-k metal gate PMOSFETs;Current Applied Physics;2018-08
4. Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors;Thin Solid Films;2016-11
5. Selective epitaxial growth of stepwise SiGe:B at the recessed sources and drains: A growth kinetics and strain distribution study;AIP Advances;2016-09
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