Full characterization of ultrathin 5-nm low- k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties-Reference-Cited by-同舟云学术

Full characterization of ultrathin 5-nm low- k dielectric bilayers: Influence of dopants and surfaces on the mechanical properties

Published:2020-07-13 Issue:7 Volume:4 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Frazer Travis D.^ORCID,Knobloch Joshua L.^ORCID,Hernández-Charpak Jorge N.,Hoogeboom-Pot Kathleen M.^ORCID,Nardi Damiano,Yazdi Sadegh,Chao Weilun,Anderson Erik H.,Tripp Marie K.,King Sean W.^ORCID,Kapteyn Henry C.,Murnane Margaret M.,Abad Begoña

Funder

National Science Foundation

Gordon and Betty Moore Foundation

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.073603/fulltext

Reference45 articles.

1. Low-k dielectric materials

2. Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art

3. Are surfaces elastically softer or stiffer?

4. Nondestructive Measurement of the Evolution of Layer-Specific Mechanical Properties in Sub-10 nm Bilayer Films

5. Effective geometric size and bond-loss effect in nanoelasticity of GaN nanowires

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