Material lattice orientation effect of local Si 1-x Ge x stressors on the width dependence of high-k metal gate PMOSFETs
Author:
Funder
MOST
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference21 articles.
1. Layout variation effects in advanced MOSFETs: STI-induced embedded SiGe strain relaxation and dual-stress-liner boundary proximity effect;Choi;IEEE Trans. Electron Devices,2010
2. Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors;Leitz;J. Appl. Phys.,2002
3. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Lee;J. Appl. Phys.,2005
4. New observations in LOD effect of 45-nm P-MOSFETs with strained SiGe Source/Drain and dummy gate;Cheng;IEEE Trans. Electron Devices,2009
5. Stress mapping in strain-engineered silicon p-type MOSFET device: a comparison between process simulation and experiments;Krzeminski;J. Vac. Sci. Technol. B,2012
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical Model Developed for Precise Stress Estimation of Device Channel Within Advanced Planar MOSFET Architectures;IEEE Transactions on Electron Devices;2020-04
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