Electromigration model for the prediction of lifetime based on the failure unit statistics in aluminum metallization
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1528311
Reference16 articles.
1. Dependence of Electromigration‐Induced Failure Time on Length and Width of Aluminum Thin‐Film Conductors
2. A model for the width dependence of electromigration lifetimes in aluminum thin‐film stripes
3. Grain size dependence of electromigration‐induced failures in narrow interconnects
4. A Complete Model of Lifetime Distribution for Electromigration Failure Including Grain Boundary and Lattice Diffusions in Submicron Thin Film Metallization
5. Electromigration in integrated circuit conductors
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1. Reliability characterization of a soot particle sensor in terms of stress- and electromigration in thin-film platinum;Microsystem Technologies;2015-06-05
2. Nano- and micrometer-scale thin-film-interconnection failure theory and simulation and metallization lifetime prediction, Part 2: Polycrystalline-line degradation and bulk failure;Russian Microelectronics;2010-05-20
3. Exponential ionic drift: fast switching and low volatility of thin-film memristors;Applied Physics A;2008-11-28
4. Modeling the electromigration failure time distribution in short copper interconnects;Journal of Applied Physics;2008-09
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