1. Valiev, K.A., Goldstein, R.V., Zhitnikov, Yu.V., Makhviladze, T.M., and Sarychev, M.E., Nanoand Micrometer-Scale Thin-Film-Interconnection Failure Theory and Simulation and Metallization Lifetime Prediction, Part 1: A General Theory of Vacancy Transport, Mechanical-Stress Generation, and Void Nucleation under Electromigration in Relation to Multilevel-Metallization Degeneration and Failure, Mikroelektronika, 2009, vol. 38, no. 6, pp. 404–427 [Russ. Microelectron. (Engl. Transl.), vol. 38, no. 6, pp. 364–384].
2. Makhviladze, T.M. and Sarychev, M.E., Electromigration Failure of Thin-Film Interconnections: A Theory and Its Applications, in Tr. FTIAN, 2009, vol. 20.
3. Goldstein, R.V., Makhviladze, M.E., and Sarychev, M.E., Modeling Reliability and Mechanisms of Destruction of Metallization and Interconnects in Micro- and Nanoelectronic Structures, in Nanotechnology International Forum, Abstracts, Scientific and Technological Sections, Moscow, 2008, vol. 2, pp. 140–142.
4. Makhviladze, T.M., Sarychev, M.E., and Zhitnikov, Yu.V., A Model for Calculations of Effective Ion Charges in Microcircuit Interconnects, in Proc. Int. Conf. on IC Design and Technology (ICICDT), Grenoble, 2008, pp. G17–G20.
5. Makhviladze, T. and Sarychev, M., New Results of Modeling in Micro- and Nanoelectronics, in Int. Conf. on IC Micro- and Nanoelectronics (ICMNE-2007), Book of Abstracts, Moscow, 2007, p. L1–06.