Determination of valence band offsets from Si/Si1−xGex/Si using temperature‐dependent current–voltage characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361174
Reference21 articles.
1. 50 GHz Si1 − xGex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy
2. 113-GHz f/sub T/ graded-base SiGe HBT's
3. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy
4. Infrared absorption in SiGe/Si multiple quantum wells
5. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
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1. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures;Journal of Physics D: Applied Physics;2012-08-28
2. Defect analysis of n-type silicon strained layers;Materials Science in Semiconductor Processing;2001-02
3. Defect related dark current and charge injection in Si1−xGex/Si multiple quantum wells;Solid-State Electronics;1999-05
4. Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 μm;IEEE Journal of Selected Topics in Quantum Electronics;1998
5. Low-temperature photoluminescence in SiGe single quantum wells;Applied Physics A: Materials Science & Processing;1998-01-01
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