Modulation doped SiGe-Si MQW for low-voltage high-speed modulators at 1.3 μm
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx4/2944/15857/00736101.pdf?arnumber=736101
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Linear and nonlinear optical absorption coefficients and refractive index changes in modulation-doped quantum wells: Effects of the magnetic field and hydrostatic pressure;Physica B: Condensed Matter;2013-11
2. Design of a 1550nm SiGe/Si quantum-well optical modulator;SPIE Proceedings;2010-06-17
3. SiGeC/Si Electrooptic Modulators;Journal of Lightwave Technology;2007-03
4. Optoelectronic switches based on diffusive conduction;Journal of Applied Physics;2006-08-15
5. Response time analysis of SiGe∕Si modulation-doped multiple-quantum-well structures for optical modulation;Journal of Applied Physics;2004-12
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