Infrared absorption in SiGe/Si multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference8 articles.
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Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Capture, storage, and emission of holes in Si/Si1−xGex/Si QW's for the determination of the valence band offset by DLTS;Applied Surface Science;1996-08
2. Determination of valence band offsets from Si/Si1−xGex/Si using temperature‐dependent current–voltage characteristics;Journal of Applied Physics;1996-03
3. Auger-free SiSiGe quantum well structures for infra-red detection at 10 μm;Solid-State Electronics;1996-02
4. Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy;Journal of Applied Physics;1995-11
5. Absorption and Recombination in p-type SiGe quantum well structures;Superlattices and Microstructures;1994-12
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