Modeling the effect of ion mixing and surface roughening on depth profiles
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Use of Auger Electron Spectroscopy and Inert Gas Sputtering for Obtaining Chemical Profiles
2. Deconvolution method for composition profiling by Auger sputtering technique
3. Depth resolution in composition profiles by ion sputtering and surface analysis for single-layer and multilayer structures on real substrates
4. Sputter‐induced roughness in thermal SiO2 during Auger sputter profiling studies of the Si–SiO2 interface
5. The depth dependence of the depth resolution in sputter profiling
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Infrared absorption in SiGe/Si multiple quantum wells;Superlattices and Microstructures;1992-01
2. Influence of ion mixing, ion beam-induced roughness and temperature on the depth resolution of sputter depth profiling of metallic bilayer interfaces;Surface and Interface Analysis;1990-05
3. Quantitative secondary ion mass spectrometry depth profiling of TiSi2 films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-09
4. Direct and Recoil Implantation, and Collisional Ion-Beam Mixing: Recent Low-Temperature Experiments;Materials Modification by High-fluence Ion Beams;1989
5. Surface analysis: x-ray photoelectron spectroscopy and Auger electron spectroscopy;Analytical Chemistry;1988-06-15
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