Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359658
Reference26 articles.
1. 50 GHz Si1 − xGex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy
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3. Resonant magnetotunneling of GexSi1−x resonant tunneling structures grown at extremely low temperature by molecular-beam epitaxy
4. Quantum devices using SiGe/Si heterostructures
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1. Conduction band offset determination between strained CdSe and ZnSe layers using DLTS;AIP CONF PROC;2013
2. Evaluation of electronic transport properties and conduction band offsets of asymmetric InAs/InxGa1−xAs/GaAs dot-in-well structures;Journal of Physics D: Applied Physics;2012-08-28
3. Determination of conduction band offset between strained CdSe and ZnSe layers using deep level transient spectroscopy;Applied Physics Letters;2012-06-18
4. Local measurement of conduction band offset for ZnCdS/ZnSSe nano-structure by Laplace current DLTS cooperated with AFM technique;physica status solidi (c);2010-04-12
5. Quantum well heterostructures studied by deep-level transient spectroscopy;SPIE Proceedings;2009-05-07
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