Defect related dark current and charge injection in Si1−xGex/Si multiple quantum wells-Reference-Cited by-同舟云学术

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Defect related dark current and charge injection in Si1−xGex/Si multiple quantum wells

Published:1999-05 Issue:5 Volume:43 Page:953-959
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Huang X.L,Jeong M.S,Ihm S.H,Cha O.H,Kim J.Y,Suh E.-K,Lee H.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Quantitative analysis of light emission from SiGe quantum wells

2. Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices

3. High quantum efficiency photoluminescence from localized excitons in Si1−xGex

4. Photoluminescence mechanisms in thinSi1−xGexquantum wells

5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Ge Composition on Infrared Detecting Performance of Strain Si/${\rm Si}_{1-{\rm x}-{\rm y}}{\rm Ge}_{\rm x} {\rm C} _{\rm y}$ Heterojunction on Preferentially Etched Silicon Substrate;IEEE Sensors Journal;2010-08

2. Influence of the mesa size on Ge island electroluminescence properties;Semiconductor Science and Technology;2000-08-10

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