Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)nsuperlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.4099/fulltext
Reference19 articles.
1. Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
2. Structure and optical properties of Ge‐Si ordered superlattices
3. Symmetrically strained Si/Ge superlattices on Si substrates
4. Structurally induced optical transitions in Ge-Si superlattices
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