Photoluminescence mechanisms in thinSi1−xGexquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.16655/fulltext
Reference17 articles.
1. Near‐band‐gap photoluminescence from pseudomorphic Si1−xGexsingle layers on silicon
2. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
3. Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
4. Near band-edge photoluminescence from Si1−xGex/Si superlattices grown by molecular-beam epitaxy
5. Luminescence origins in molecular beam epitaxial Si1−xGex
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