Luminescence origins in molecular beam epitaxial Si1−xGex
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107823
Reference16 articles.
1. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
2. Electroluminescence and photoluminescence from Si1−xGexalloys
3. Photoluminescence of Si-rich Si-Ge alloys
4. Near-band-gap photoluminescence of Si-Ge alloys
5. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
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1. Optical Properties of Bound and Localized Excitons;Graduate Texts in Physics;2019
2. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Effect on SiGe Light Emission;ECS Transactions;2016-08-19
3. Si/SiGe Heterointerfaces in One-, Two-, and Three-Dimensional Nanostructures: Their Impact on SiGe Light Emission;Frontiers in Materials;2016-03-07
4. Infrared luminescence of annealed germanosilicate layers;Journal of Luminescence;2014-03
5. Optical Properties of Bound and Localized Excitons and of Defect States;Semiconductor Optics;2012
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