Near-band-gap photoluminescence of Si-Ge alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.5683/fulltext
Reference47 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. Structurally induced optical transitions in Ge-Si superlattices
3. STRUCTURAL, COMPOSITIONAL, AND OPTICAL PROPERTIES OF ULTRATHIN Si/Ge SUPERLATTICES
4. Electron-hole drops in Ge-Si alloys
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