Direct observation of band‐edge luminescence and alloy luminescence from ultrametastable silicon‐germanium alloy layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107199
Reference10 articles.
1. Photoluminescence in short-period Si/Ge strained-layer superlattices
2. Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGexalloys
3. Near‐band‐gap photoluminescence of Si1−xGexalloys grown on Si(100) by molecular beam epitaxy
4. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
5. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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