Optical properties of GaAs/GaNxAs1−x quantum well structures grown by migration-enhanced epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
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4. Bowing parameter of the band-gap energy of GaNxAs1−x
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First-principles predictions of the physical properties of GaNxAs1–x: Materials for futuristic optoelectronic devices;Pramana;2023-09-02
2. Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers;Applied Physics Letters;2004-04-05
3. Effect of post-growth laser treatment on optical properties of Ga(In)NAs quantum wells;IEE Proceedings - Optoelectronics;2003
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