Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
Author:
Affiliation:
1. Department of Physics, Chemistry, and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden
Funder
Knut och Alice Wallenbergs Stiftelse (Knut and Alice Wallenberg Foundation)
Vetenskapsrådet (Swedish Research Council)
Energimyndigheten (Swedish Energy Agency)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903819
Reference41 articles.
1. Substitutional and interstitial carbon in wurtzite GaN
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3. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
4. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy
5. On p‐type doping in GaN—acceptor binding energies
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