Substitutional and interstitial carbon in wurtzite GaN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1498879
Reference38 articles.
1. Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
2. On p‐type doping in GaN—acceptor binding energies
3. CCl4 doping of GaN grown by metalorganic molecular beam epitaxy
4. CCl4 doping of GaN grown by metalorganic molecular beam epitaxy
5. Properties of carbon as an acceptor in cubic GaN
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