Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4810002
Reference22 articles.
1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
2. III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
3. Ge MOSFETs performance: Impact of Ge interface passivation
4. High-Electron-Mobility $\hbox{Ge/GeO}_{2}$ n-MOSFETs With Two-Step Oxidation
5. High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms
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3. Modulation of Schottky barrier at metal/Ge contacts by phosphoric acid coating and excimer laser annealing;Materials Science in Semiconductor Processing;2023-06
4. Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al2O3/GeOx Gate Stacks;IEEE Journal of the Electron Devices Society;2023
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