Strain relaxation of germanium-tin (GeSn) fins-Reference-Cited by-同舟云学术

Strain relaxation of germanium-tin (GeSn) fins

Published:2018-02 Issue:2 Volume:8 Page:025111
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kang Yuye¹,Huang Yi-Chiau²,Lee Kwang Hong³^ORCID,Bao Shuyu³⁴,Wang Wei¹^ORCID,Lei Dian¹^ORCID,Masudy-Panah Saeid¹,Dong Yuan¹,Wu Ying¹,Xu Shengqiang¹,Tan Chuan Seng⁴,Gong Xiao¹,Yeo Yee-Chia¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576

2. Applied Materials Inc. Sunnyvale, California, United States 95054

3. Low Energy Electronic Systems (LEES), Singapore MIT Alliance for Research and Technology (SMART), Singapore 138602

4. School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Singapore 639798

Funder

MOE Academic Research Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5012559

Reference37 articles.

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3. Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

4. Hole Mobility Enhancement in Compressively Strained ${\rm Ge}_{0.93}{\rm Sn}_{0.07}$ pMOSFETs

5. X. Gong, G. Han, S. Su, R. Cheng, P. Guo, F. Bai, Y. Yang, Q. Zhou, B. Liu, K. H. Goh, G. Zhang, C. Xue, B. Cheng, and Y.C. Yeo, Tech. Dig. – Symp. VLSI Technol. 2013, 34.

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