Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$</tex> </formula> Passivation-Reference-Cited by-同舟云学术

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

Published:2013-03 Issue:3 Volume:34 Page:339-341
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gong Xiao,Han Genquan,Bai Fan,Su Shaojian,Guo Pengfei,Yang Yue,Cheng Ran,Zhang Dongliang,Zhang Guangze,Xue Chunlai,Cheng Buwen,Pan Jisheng,Zhang Zheng,Tok Eng Soon,Antoniadis Dimitri,Yeo Yee-Chia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6468094/06415984.pdf?arnumber=6415984

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