Optical properties of tensile-strained and relaxed Ge films grown on InGaAs buffer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4864466
Reference31 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium
3. Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
4. Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
5. Low temperature growth of Ge1−Sn buffer layers for tensile–strained Ge layers
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1. Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1–xAs Stressors;ACS Omega;2022-02-08
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4. Calculation of band structure of the strained germanium nanofilm, doped with a donor impurity;Physica E: Low-dimensional Systems and Nanostructures;2020-04
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