Calculation of band structure of the strained germanium nanofilm, doped with a donor impurity
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference31 articles.
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1. The Influence of Mechanical Strains and Quantum-Size Effects on the Photosensitivity of Ge/Ge(x)Si(1-x) Nanofilm;Romanian Journal of Physics;2024-03-15
2. Interaction of Electromagnetic Radiation with a Semiconductor Nanolayer in the Case of an Arbitrary Rotation Axis Orientation of an Constant Energy Ellipsoid;Russian Microelectronics;2023-12
3. Enhanced Nanostructure Evolution in Functional Spinel Ceramics through Additional Phases;2023 IEEE 13th International Conference on Electronics and Information Technologies (ELIT);2023-09-26
4. Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations;Applied Surface Science;2023-07
5. Electrical properties of strained germanium nanofilm;Physics and Chemistry of Solid State;2021-05-28
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