Calculation of band structure of the strained germanium nanofilm, doped with a donor impurity
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference31 articles.
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4. Strained germanium films in Ge/InGaAs/GaAs heterostructures: formation of edge misfit dislocations at the Ge/InGaAs interface;Bolkhovityanov;Phys. Solid State,2011
5. Optical properties of tensile-strained and relaxed Ge films grown on InGaAs buffer;Volodin;J. Appl. Phys.,2014
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3. Electrical properties of strained germanium nanofilm;Physics and Chemistry of Solid State;2021-05-28
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