Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2945629
Reference12 articles.
1. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
2. Infrared Absorption of Germanium near the Lattice Edge
3. Strain-induced band gap shrinkage in Ge grown on Si substrate
4. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
5. Synthesis of epitaxial SnxGe1−x alloy films by ion‐assisted molecular beam epitaxy
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