Strain and mosaic spread of carbon and gallium co‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357615
Reference22 articles.
1. Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium Arsenide
2. The incorporation and characterisation of acceptors in epitaxial GaAs
3. Carbon implanted into gallium arsenide
4. Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor‐phase epitaxy
5. Carbon diffusion in undoped,n‐type, andp‐type GaAs
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2. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates;physica status solidi (b);2020-04
3. Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices;ECS Journal of Solid State Science and Technology;2019
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5. The effect of helium ion implantation on the relaxation of strained InGaAs thin films;Thin Solid Films;2012-01
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