Carbon implanted into gallium arsenide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353051
Reference19 articles.
1. Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor‐phase epitaxy
2. Carbon diffusion in undoped,n‐type, andp‐type GaAs
3. LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors
4. Carbon‐doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source
5. Carbon-doped base AlGaAs/GaAs HBTs grown by MOCVD using TMAs
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Activation of C Atoms Implanted into GaAs Annealed with Highly As-Doped a-Si:H Films;Journal of The Electrochemical Society;2002
2. Electrical isolation of p-type GaAs layers by ion irradiation;Journal of Applied Physics;2002
3. Electrical activation of carbon in GaAs: Implantation temperature effects;Applied Physics Letters;2001-03-19
4. Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs;Journal of Applied Physics;1999-05
5. Carbon and group II acceptor coimplantation in GaAs;Journal of Applied Physics;1998-11
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