Electrical isolation of p-type GaAs layers by ion irradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
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5. Thermal stability of the electrical isolation inn-type gallium arsenide layers irradiated with H, He, and B ions
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1. Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy;Materials Science in Semiconductor Processing;2023-10
2. Modeling Electrochemical Etching of Proton Irradiated p-GaAs for the Design of MEMS Building Blocks;Journal of Microelectromechanical Systems;2014-08
3. Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications;IOP Conference Series: Materials Science and Engineering;2013-12-16
4. Deep levels fine structure in proton implanted p-type GaAs;Journal of Physics D: Applied Physics;2010-05-06
5. Emission rate dependence on the electric field for two trap levels in proton-irradiatedn-type GaAs;Physical Review B;2008-06-16
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