Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy-Reference-Cited by-同舟云学术

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Depth-distribution of resistivity within ion-irradiated semiconductor layers revealed by low-kV scanning electron microscopy

Published:2023-10 Issue: Volume:165 Page:107640
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Jóźwik I.^ORCID,Jagielski J.,Ciepielewski P.,Dumiszewska E.,Piętak-Jurczak K.,Kamiński M.,Kentsch U.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Ion implantation for isolation of III-V semiconductors;Pearton;Mater. Sci. Rep.,1990

2. The electrical characteristics of ion implanted compound semiconductors;Donnelly;Nucl. Instrum. Methods,1981

3. P/He ion implant isolation technology for AlGaN/GaN HFETs;Hanington;Electron. Lett.,1998

4. Ion-implantation doping of semiconductors;Large;J. Mater. Sci.,1967

5. Ion implantation doping of semiconductors;Sealy;Int. Mater. Rev.,1988

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