Defect Characterization of Multicycle Rapid Thermal Annealing Processed p-GaN for Vertical Power Devices
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference32 articles.
1. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
2. Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates
3. Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
4. Electrical activation characteristics of silicon-implanted GaN
5. Electrical and optical activation studies of Si-implanted GaN
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