Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates-Reference-Cited by-同舟云学术

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

Published:2020-04 Issue:4 Volume:257 Page:1900705
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Wang Yekan¹^ORCID,Huynh Kenny¹,Liao Michael E.¹^ORCID,Yu Hsuan-Ming¹^ORCID,Bai Tingyu¹,Tweedie James²^ORCID,Breckenridge Mathew Hayden³,Collazo Ramon³,Sitar Zlatko³,Bockowski Michal⁴^ORCID,Liu Yuzi⁵^ORCID,Goorsky Mark S.¹^ORCID

Affiliation:

1. Department of Materials Science and EngineeringUniversity of California, Los Angeles Los Angeles CA 90095 USA

2. Adroit Materials, Inc. Apex NC 27518 USA

3. Department of Material Science and EngineeringNorth Carolina State University Raleigh NC 27606 USA

4. Institute of High Pressure PhysicsPolish Academy of Sciences Warsaw 01-142 Poland

5. Center for Nanoscale MaterialsArgonne National Laboratory Lemont IL 60439 USA

Funder

Advanced Research Projects Agency - Energy

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900705

Reference41 articles.

1. Vertical Power p-n Diodes Based on Bulk GaN

2. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

3. Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV

4. High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing

5. P-type doping of GaN$(000\bar{1})$ by magnesium ion implantation

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