Equilibrium critical thickness of epitaxial strained layers in the {111} orientations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363951
Reference11 articles.
1. Dislocations in strained-layer epitaxy: theory, experiment, and applications
2. Structure, properties and applications of GexSi1-xstrained layers and superlattices
3. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
4. Optical characterization of [111]B InGaAs layers
5. The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrate
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