Optical characterization of [111]B InGaAs layers
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference18 articles.
1. Electronic structure of [001] and [111] growth-axis semiconductor superlattices;Mailhiot;Phys. Rev. B,1987
2. Critical layer thickness on (111)B-oriented InGaAs/GaAs heteroepitaxy;Anan;Appl. Phys. Lett.,1992
3. The molecular beam epitaxial growth of InAs on GaAs (111)B and (100) oriented substrates: a comparative growth study;Hooper;J. Cryst. Growth,1993
4. Relaxation of InGaAs layers grown on (111)B GaAs;Sacedón;Appl. Phys. Lett.,1994
5. Strain-induced effects on the performance of AlGaInP visible lasers;Hashimoto;IEEE J. Quantum Electron.,1993
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3. Phonons inIn0.53Ga0.47As/InP(100)superlattices by infrared reflectance;Physical Review B;2003-10-16
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