New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices
2. Piezoelectric effects in strained‐layer superlattices
3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
4. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy
5. Optical characterization of [111]B InGaAs layers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Size‐Dependent Strain Relaxation in InAs Quantum Dots on Top of GaAs(111)A Nanopillars;Advanced Materials Interfaces;2022-02-27
2. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures;Microelectronics Journal;2002-07
3. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0–1.1μm operation;Microelectronics Journal;2002-07
4. Espesores críticos de relajación en pozos cuánticos de InGaAs/ GaAs sobre sustratos de GaAs (001) y (111)B;Boletín de la Sociedad Española de Cerámica y Vidrio;2000-08-30
5. Relaxation study of InxGa1−xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications;Journal of Crystal Growth;1999-11
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