Relaxation study of InxGa1−xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications-Reference-Cited by-同舟云学术

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Relaxation study of InxGa1−xAs/GaAs quantum-well structures grown by MBE on (001) and (111)B GaAs for long wavelength applications

Published:1999-11 Issue:4 Volume:206 Page:287-293
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sánchez J.J,Tijero J.M.G,Izpura I,Sánchez-Rojas J.L,Hopkinson M,Gutiérrez M,González D,Aragón G,Garcı́a R

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

2. Viable strained‐layer laser at λ=1100 nm

3. Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers

4. Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy

5. Strain diagnosis of (001) and (111) InGaAs layers by optical techniques

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on B GaAs;Physica E: Low-dimensional Systems and Nanostructures;2004-07

2. Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates;Applied Physics Letters;2004-04-05

3. High-power diode-end-pumped passively mode-locked Nd:YVO4 laser with a relaxed saturable Bragg reflector;Solid State Lasers XI;2002-03-13

4. Diode-end-pumped passively mode-locked high-power Nd:YVO_4 laser with a relaxed saturable Bragg reflector;Optics Letters;2001-02-15

5. Photonic crystals;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

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