The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Fermi Level Position at Metal-Semiconductor Interfaces
2. Insitucontacts to GaAs based on InAs
3. InAs quantum dots in a single-crystal GaAs matrix
4. Strain effect on band offsets at pseudomorphic InAs/GaAs heterointerfaces characterized by x-ray photoemission spectroscopy
5. Structural and electrical characterization of InAs grown on GaAs substrates by molecular‐beam epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy;Japanese Journal of Applied Physics;2024-01-01
2. Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy;Applied Physics Letters;2020-03-23
3. Growth and transport properties of InAs thin films on GaAs;Journal of Crystal Growth;1998-07
4. Optical characterization of [111]B InGaAs layers;Microelectronics Journal;1995-12
5. Strain diagnosis of (001) and (111) InGaAs layers by optical techniques;Physica Status Solidi (a);1995-11-16
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