Characterization of Al2O3/InSb/Si MOS diodes having various InSb thicknesses grown on Si(1 1 1) substrates-Reference-Cited by-同舟云学术

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Characterization of Al2O3/InSb/Si MOS diodes having various InSb thicknesses grown on Si(1 1 1) substrates

Published:2012-02-22 Issue:4 Volume:27 Page:045007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kadoda Azusa,Iwasugi Tatsuya,Nakatani Kimihiko,Nakayama Koji,Mori Masayuki,Maezawa Koichi,Miyazaki Eiji,Mizutani Takashi

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

2. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

3. Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications

4. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

5. Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate;e-Journal of Surface Science and Nanotechnology;2022-12-08

2. Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning;Applied Physics Letters;2019-12-02

3. Effect of HCl cleaning on InSb–Al2O3 MOS capacitors;Semiconductor Science and Technology;2019-02-26

4. Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures;IEEE Transactions on Electron Devices;2013-05

5. Effective Mobility Enhancement in Al2O3/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers;Japanese Journal of Applied Physics;2013-04-01

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