Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures-Reference-Cited by-同舟云学术

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Electrical Characteristics of ${\rm Al}_{2}{\rm O}_{3}/{\rm InSb}$ MOSCAPs and the Effect of Postdeposition Annealing Temperatures

Published:2013-05 Issue:5 Volume:60 Page:1555-1560
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Trinh Hai Dang,Lin Yueh Chin,Chang Edward Yi,Lee Ching-Ting,Wang Shin-Yuan,Nguyen Hong Quan,Chiu Yu Sheng,Luc Quang Ho,Chang Hui-Chen,Lin Chun-Hsiung,Jang Simon,Diaz Carlos H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6504760/06504781.pdf?arnumber=6504781

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning;Applied Physics Letters;2019-12-02

2. The photoemission study of InSb/HfO2 stacks upon N2 rapid thermal annealing;Vacuum;2019-10

3. Effect of HCl cleaning on InSb–Al2O3 MOS capacitors;Semiconductor Science and Technology;2019-02-26

4. Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition;Applied Physics Express;2018-04-17

5. InSb Photodiodes for Monolithic Active Focal Plane Arrays on GaAs Substrates;IEEE Transactions on Electron Devices;2016-08

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